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BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

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BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Model Number : BT151-500R

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8200pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Thermal resistance junction to ambient : 60 K/W

Average on-state current : 7.5 A

RMS on-state current : 12 A

Non-repetitive peak on-state current : 100 A

Storage temperature : -40 to 150 ˚C

Operating junction temperature : 125 ˚C

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Thyristors
BT151 series

GENERAL DESCRIPTION
Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM, V_RRM	Repetitive peak off-state voltages		-	-500R 500¹	-650R 650¹	-800R 800	V
I_T(AV)	Average on-state current	half sine wave; T_mb ≤ 109 ˚C	-	7.5			A
I_T(RMS)	RMS on-state current	all conduction angles	-	12			A
I_TSM	Non-repetitive peak on-state current	half sine wave; Tj = 25 ˚C prior to surge	-
I² t	I² t for fusing	t = 10 ms t = 8.3 ms t = 10 ms	-	100 110 50			A A A² s
dIT/dt	Repetitive rate of rise of on-state current after triggering	ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs	-	50			A/µs
I_GM	Peak gate current		-	2			A
V_GM	Peak gate voltage		-	5			V
V_RGM	Peak reverse gate voltage		-	5			V
P_GM	Peak gate power		-	5			W
P_G(AV)	Average gate power	over any 20 ms period	-	0.5			W
T_stg	Storage temperature		-40	150			˚C
T_j	Operating junction temperature		-	125			˚C

MECHANICAL DATA

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

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Product Tags:

npn smd transistor

multi emitter transistor

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